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PD - 96909
DIGITAL AUDIO MOSFET
Features
* Key parameters optimized for Class-D audio amplifier applications * Low RDSON for improved efficiency * Low QG and QSW for better THD and improved efficiency * Low QRR for better THD and lower EMI * 175C operating junction temperature for ruggedness * Can deliver up to 300W per channel into 8 load in half-bridge topology
G S D
IRFB4103PBF
Key Parameters
200 139 25 15 1.0 175 V m: nC nC C
VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max
TO-220AB
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TC = 100C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Power Dissipation f Power Dissipation f Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw 300 10lbxin (1.1Nxm)
Max.
200 30 17 12 68 140 71 0.95 -55 to + 175
Units
V A
W W/C C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case f Case-to-Sink, Flat, Greased Surface Junction-to-Ambient f Typ. --- 0.50 --- Max. 1.05 --- 62 C/W Units
Notes through are on page 2
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1
1/5/05
IRFB4103PBF
BV DSS V DSS/T J R DS(on) V GS(th) V GS(th)/T J IDSS IGSS g fs Qg Q gs1 Q gs2 Q gd Q godr Q sw R G(int) td(on) tr td(off) tf C iss C oss C rss C oss LD LS
Electrical Characteristics @ T J = 25C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Q gs2 + Q gd) Internal Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Internal Drain Inductance Internal Source Inductance
Min.
200 --- --- 3.0 --- --- --- --- --- 7.1 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. Max. Units
--- 0.21 139 --- -13 --- --- --- --- --- 25 5.4 2.9 12 4.7 15 1.0 9.6 40 16 5.4 900 120 22 150 4.5 7.5 --- --- 165 5.5 --- 25 250 100 -100 --- 38 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- nH --- pF V GS = 0V V DS = 50V ns
Conditions
V GS = 0V, ID = 250A V GS = 10V, ID = 12A
V m V mV/C A nA S
V/C Reference to 25C, ID = 1mA
e
V DS = V GS, ID = 250A V DS = 200V, V GS = 0V V DS = 200V, V GS = 0V, T J = 125C V GS = 30V V GS = -30V V DS = 50V, ID = 12A V DS = 160V
nC
V GS = 10V ID = 12A See Fig. 6 and 19
V DD = 100V, V GS = 10VAe ID = 12A R G = 2.5
= 1.0MHz, Between lead, 6mm (0.25in.) from package
See Fig.5
V GS = 0V, V DS = 0V to 160V
D
G S
and center of die contact
Avalanche Characteristics
Parameter Typ. Max. Units mJ A mJ
E AS IAR E AR
Single Pulse Avalanche Energyd Avalanche CurrentAg Repetitive Avalanche Energy
---
130
g
Min.
--- --- --- --- --- --- --- --- 130 730
See Fig. 14, 15, 17a, 17b
Diode Characteristics
Parameter
IS @ T C = 25C Continuous Source Current ISM V SD trr Q rr
Notes:
Typ. Max. Units
17 A 68 1.7 200 110 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. T J = 25C, IS = 10A, V GS = 0V T J = 25C, IF = 12A di/dt = 100A/s
(Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
e
e
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 1.78mH, RG = 25, IAS = 12A. Pulse width 400s; duty cycle 2%.
R is measured at TJ of approximately 90C. Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
avalanche information
2
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IRFB4103PBF
100
TOP VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V
100
TOP VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
10
1
6.0V
6.0V 60s PULSE WIDTH Tj = 25C
0.1 0.1 1 10 100
60s PULSE WIDTH Tj = 175C
1 0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100.0
Fig 2. Typical Output Characteristics
3.5
RDS(on) , Drain-to-Source On Resistance
ID = 17A
3.0
ID, Drain-to-Source Current()
VGS = 10V
10.0
(Normalized)
TJ = 175C
2.5
2.0
1.0
TJ = 25C VDS = 50V
1.5
1.0
60s PULSE WIDTH
0.1 2.0 4.0 6.0 8.0 10.0 12.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
10000
Fig 4. Normalized On-Resistance vs. Temperature
20
VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
ID= 12A VDS = 160V VDS= 100V VDS= 40V
16
C, Capacitance (pF)
1000
Ciss
12
Coss
100
8
4
Crss
10 1 10 100 1000
0 0 10 20 30 40 QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
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Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
IRFB4103PBF
100.0
1000
ID, Drain-to-Source Current (A)
TJ = 175C
OPERATION IN THIS AREA LIMITED BY R DS (on)
ISD , Reverse Drain Current (A)
100 100sec 10 1msec 1 Tc = 25C Tj = 175C Single Pulse 0.1 1 10 10msec
10.0
1.0
TJ = 25C
VGS = 0V
0.1 0.0 0.5 1.0 1.5 2.0
DC 100 1000
VSD, Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
20 5.5
Fig 8. Maximum Safe Operating Area
16
VGS(th) Gate threshold Voltage (V)
5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5
ID , Drain Current (A)
12
ID = 250A
8
4
0 25 50 75 100 125 150 175
-75
-50 -25
0
25
50
75
100 125 150 175
TJ , Junction Temperature (C)
TJ , Temperature ( C )
Fig 9. Maximum Drain Current vs. Case Temperature
10
Fig 10. Threshold Voltage vs. Temperature
Thermal Response ( Z thJC )
1
D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1
J J 1 R1 R1 2 R2 R2 R3 R3 3 C 3
0.1
Ri (C/W) i (sec) 0.1624 0.000094 0.4354 0.4517 0.001831 0.018175
1
2
0.01
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRFB4103PBF
RDS (on), Drain-to -Source On Resistance ( )
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0
600
ID = 12A
EAS, Single Pulse Avalanche Energy (mJ)
500
ID 3.7A 6.2A BOTTOM 12A
TOP
400
300
TJ = 125C TJ = 25C
200
100
0 25 50 75 100 125 150 175
VGS, Gate-to-Source Voltage (V)
Starting TJ, Junction Temperature (C)
Fig 12. On-Resistance Vs. Gate Voltage
100
Fig 13. Maximum Avalanche Energy Vs. Drain Current
Duty Cycle = Single Pulse
Avalanche Current (A)
10
0.01 0.05 0.10
Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax
1
0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current Vs.Pulsewidth
140 120
EAR , Avalanche Energy (mJ)
TOP Single Pulse BOTTOM 1% Duty Cycle ID = 12A
100 80 60 40 20 0 25 50 75 100 125 150 175
Starting TJ , Junction Temperature (C)
Fig 15. Maximum Avalanche Energy Vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 17a, 17b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav
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IRFB4103PBF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 17a. Unclamped Inductive Test Circuit
LD VDS
Fig 17b. Unclamped Inductive Waveforms
+
VDD D.U.T VGS Pulse Width < 1s Duty Factor < 0.1%
90%
VDS
10%
VGS
td(on) tr td(off) tf
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
Id Vds Vgs
L
0
DUT 1K
VCC
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 19a. Gate Charge Test Circuit
Fig 19b Gate Charge Waveform
6
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IRFB4103PBF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
4 15.24 (.600) 14.84 (.584)
1.15 (.045) MIN 1 2 3
LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN
14.09 (.555) 13.47 (.530)
4.06 (.160) 3.55 (.140)
3X 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES:
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.92 (.115) 2.64 (.104)
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMPL E : T HIS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R
Note: "P" in assembly line position indicates "Lead-Free"
DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C
TO-220AB packages are not recommended for Surface Mount Application.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 01/05
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